Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films
نویسندگان
چکیده
Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb₂O₅-NaNbO₃ nanocomposite thin films on SrRuO₃-buffered LaAlO₃ substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.
منابع مشابه
Vertical Interface Induced Dielectric Relaxation in Nanocomposite (BaTiO3)1-x:(Sm2O3)x Thin Films
Vertical interfaces in vertically aligned nanocomposite thin films have been approved to be an effective method to manipulate functionalities. However, several challenges with regard to the understanding on the physical process underlying the manipulation still remain. In this work, because of the ordered interfaces and large interfacial area, heteroepitaxial (BaTiO3)1-x:(Sm2O3)x thin films hav...
متن کاملElectrochemical Energy Storage Applications of CVD Grown Niobium Oxide Thin Films.
We report here on the controlled synthesis, characterization, and electrochemical properties of different polymorphs of niobium pentoxide grown by CVD of new single-source precursors. Nb2O5 films deposited at different temperatures showed systematic phase evolution from low-temperature tetragonal (TT-Nb2O5, T-Nb2O5) to high temperature monoclinic modifications (H-Nb2O5). Optimization of the pre...
متن کاملInvestigation of Antireflection Nb2O5 Thin Films by the Sputtering Method under Different Deposition Parameters
In this study, Nb2O5 ceramic was used as the target to deposit the Nb2O5 thin films on glass substrates with the radio frequency (RF) magnetron sputtering method. Different deposition temperatures and O2 ratios were used as parameters to investigate the optical properties of Nb2O5 thin films. The deposition parameters were a pressure of 5 × 10−3 Torr, a deposition power of 100 W, a deposition t...
متن کاملStrain Engineering of Ferroelectric Domains in KxNa1−xNbO3 Epitaxial Layers
The application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural properties of ferroelectric domains and their corresponding piezoelectric behavior. The formation of different ferroelectric phases can be understood by a strain-phase diagram, which is calculated within the framework of the Landau–Ginzbur...
متن کاملFormation of Nb2O5 matrix and Vis-NIR absorption in Nb-Ge-O thin film
This paper investigates the crystal structure and optical absorption of Ge-doped Nb-oxide (Nb-Ge-O) thin films prepared by RF sputtering. A wide-gap material, Nb2O5, is selectively produced as a matrix to disperse Ge nanocrystals through compositional optimization with Ge chip numbers and oxygen ratio in argon. The optical-absorption spectra are obviously shifted to visible (vis) and near-infra...
متن کامل